HomedatasheetFQPF5N60C

FQPF5N60C Datasheet

enhancement mode power MOSFET
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Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. FQPF5N60C Features • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 2.25 A• Low Gate Charge (Typ. 15 nC)• Low Crss (Typ. 6.5 pF)• 100% Avalanche Tested
Features

Parameters

[{"Name":"FET Feature","Value":"Standard"},{"Name":"Drain to Source Voltage (Vdss)","Value":"600V"},{"Name":"Power - Max","Value":"33W"},{"Name":"Mounting Type","Value":"Through Hole"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature","Value":"- 55 C "},{"Name":"Power Dissipation","Value":"33 W "},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

EVERLIGHT ELECTRONICS CO., LTD
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