HomedatasheetFQPF6N80CT

FQPF6N80CT Datasheet

MOSFET
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Description

These FQPF6N80CT is N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. FQPF6N80CT Features • 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V• Low gate charge ( typical 21 nC)• Low Crss ( typical 8 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"800 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current","Value":"5.5 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"2.5 Ohms "},{"Name":"Configuration","Value":"Single"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220F "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

RICHTEK
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