FQPF8N60CYDTU Datasheet



These N-Channel enhancement mode power( FQPF8N60CYDTU ) field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. FQPF8N60CYDTU Features • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability


[{"Name":"Drain-Source Breakdown Voltage:","Value":"600 V"},{"Name":" Gate-Source Breakdown Voltage:","Value":"+/- 30 V"},{"Name":"Continuous Drain Current:","Value":"7.5 A"},{"Name":" Drain-Source On Resistance:","Value":"1.2 Ohms"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Fall Time:","Value":"64.5 ns"},{"Name":"Rise Time:","Value":"60.5 ns"},{"Name":" Power Dissipation:","Value":"48 W"},{"Name":"Typical Turn-Off Delay Time:","Value":"81 ns"}]

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