FQU2N60C Datasheet

FETs - Single


These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQU2N60C is well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology. FQU2N60C Features • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 8.5 nC)• Low Crss ( typical 4.3 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability


[{"Name":"Drain to Source Voltage (Vdss)","Value":"600V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"1.9A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"4.7 Ohm @ 950mA, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"4V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"12nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"235pF @ 25V"},{"Name":"Power - Max","Value":"2.5W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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