HomedatasheetFS225R12KE3

FS225R12KE3 Datasheet

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Description

The description of FS225R12KE3 is IGBT Modules 1200V 225A 3-PHASE FS225R12KE3 Features• Infineon Technologies FSxxxR12KE3 3-Phase IGBT Modules each integrate a trench/fieldstop IGBT3 and an EmCon High Efficiency diode with the EconoPACK™+ package.• The Infineon Technologies FSxxxR12KE3 3-Phase IGBT Modules offer a collector-emitter voltage of 1200V and a continuous DC-collector current of 325A (FS225) or 500A (FS300) at 25ºC.• The modules total power dissipation is 1150W (FS225) or 1450W (FS300) and the gate-emitter peak voltage is +/-20V.
Features

Parameters

[{"Name":"Product","Value":"IGBT Silicon Modules"},{"Name":"Configuration","Value":"Hex"},{"Name":"Collector- Emitter Voltage VCEO Max","Value":"1200 V"},{"Name":"Collector-Emitter Saturation Voltage","Value":"1.7 V"},{"Name":"Continuous Collector Current at 25 C","Value":"325 A"},{"Name":"Gate-Emitter Leakage Current","Value":"400 nA"},{"Name":"Power Dissipation","Value":"1.15 kW"},{"Name":"Maximum Operating Temperature","Value":"+ 125 C"},{"Name":"Maximum Gate Emitter Voltage","Value":"+/- 20 V"},{"Name":"Minimum Operating Temperature","Value":"- 40 C"}]

Manufacturer information

ON SEMICONDUCTOR

ON Semiconductor - ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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