HomedatasheetFZT968TA

FZT968TA Datasheet

Transistors
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Description

Transistors Bipolar( FZT968TA ) - BJT PNP HighCt HighV FZT968TA Features • Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A• 6 Amps continuous current (Up to 20 Amps peak )• High gain and very low saturation voltage
Features

Parameters

[{"Name":"Collector- Base Voltage VCBO:","Value":"- 15 V"},{"Name":"Collector- Emitter Voltage VCEO Max:","Value":"- 12 V"},{"Name":"Emitter- Base Voltage VEBO:","Value":"- 6 V"},{"Name":"Collector-Emitter Saturation Voltage:","Value":"- 360 mV"},{"Name":" Maximum DC Collector Current:","Value":"6 A"},{"Name":"Gain Bandwidth Product fT:","Value":"80 MHz"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Continuous Collector Current:","Value":"- 6 A"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Maximum Power Dissipation:","Value":"3 W"}]

Manufacturer information

FTDI, FUTURE TECHNOLOGY DEVICES INTERNATIONAL LTD
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