HomedatasheetGT20J321

GT20J321 Datasheet

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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Description

High Power Switching Applications
Fast Switching Applications

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
   High speed: tf = 0.04 μs (typ.)
   Low switching loss : Eon = 0.40 mJ (typ.)
                            : Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector

 

Features

Parameters

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Manufacturer information

TOSHIBA
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