HomedatasheetGT30F122

GT30F122 Datasheet

IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel
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Description

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

Features

Parameters

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Manufacturer information

TOSHIBA
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