GT60M303 Datasheet



GT60M303 -IGBT Transistors 900V/60A DIS+FRD Trench GT60M303 Applications •Fourth generation IGBT •FRD included between emitter and collector •Enhancement mode type


[{"Name":"Collector- Emitter Voltage VCEO Max:","Value":"900 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"+/- 25 V"},{"Name":"Continuous Collector Current at 25 C:","Value":"60 A"},{"Name":" Gate-Emitter Leakage Current:","Value":"+/- 500 nA"},{"Name":"ower Dissipation:","Value":"170 W"},{"Name":"Continuous Collector Current Ic Max:","Value":"60 A"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information


Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.

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