HomedatasheetGT60M303

GT60M303 Datasheet

Transistors
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Description

GT60M303 -IGBT Transistors 900V/60A DIS+FRD Trench GT60M303 Applications •Fourth generation IGBT •FRD included between emitter and collector •Enhancement mode type
Features

Parameters

[{"Name":"Collector- Emitter Voltage VCEO Max:","Value":"900 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"+/- 25 V"},{"Name":"Continuous Collector Current at 25 C:","Value":"60 A"},{"Name":" Gate-Emitter Leakage Current:","Value":"+/- 500 nA"},{"Name":"ower Dissipation:","Value":"170 W"},{"Name":"Continuous Collector Current Ic Max:","Value":"60 A"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]
Warm Hint

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