HomedatasheetH11F1TVM

H11F1TVM Datasheet

Optoisolators - Transistor, Photovoltaic Output
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Description

The H11F1TVM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F1TVM series devices are mounted in dual in-line packages. H11F1TVM Features As a remote variable resistor:• ≤100Ωto≥300MΩ• ≥99.9% linearity• ≤15pF shunt capacitance• ≥100GΩI/O isolation resistance
Features

Parameters

[{"Name":"Packaging","Value":"Tube"},{"Name":"Number of Channels","Value":"1"},{"Name":"Input Type","Value":"DC"},{"Name":"Voltage - Isolation","Value":"5300Vrms"},{"Name":"Voltage - Output","Value":"30V"},{"Name":"Current - DC Forward (If)","Value":"60mA"}]

Manufacturer information

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