HomedatasheetHGTG11N120CN

HGTG11N120CN Datasheet

IGBTs - Single
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Description

The HGTG11N120CN, HGTP11N120CN, andHGT1S11N120CNS are Non-Punch Through (NPT) IGBTdesigns. They are new members of the MOS gated highvoltage switching IGBT family. IGBTs combine the bestfeatures of MOSFETs and bipolar transistors. This devicehas the high input impedance of a MOSFET and the low onstateconduction loss of a bipolar transistor.The IGBT is ideal for many high voltage switchingapplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and drivers for solenoids, relaysand contactors.Formerly Developmental Type TA49291. HGTG11N120CN Features • 43A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . 340ns at TJ = 150oC• Short Circuit Rating• Low Conduction Loss• Avalanche Rated• Thermal Impedance SPICE ModelTemperature Compensating SABER™ Modelwww.intersil.com• Related Literature- TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
Features

Parameters

[{"Name":"Voltage - Collector Emitter Breakdown (Max)","Value":"1200V"},{"Name":"Vce(on) (Max) @ Vge, Ic","Value":"2.4V @ 15V, 11A"},{"Name":"Current - Collector (Ic) (Max)","Value":"43A"},{"Name":"Current - Collector Pulsed (Icm)","Value":"80A"},{"Name":"Power - Max","Value":"298W"},{"Name":"Switching Energy","Value":"950μJ (on), 1.3mJ (off)"},{"Name":"Td (on/off) @ 25°C","Value":"23ns/180ns"},{"Name":"Test Condition","Value":"960V, 11A, 10 Ohm, 15V"},{"Name":"Reverse Recovery Time (trr)","Value":"32ns"},{"Name":"","Value":""}]

Manufacturer information

SEMTECH [SEMTECH CORPORATION]
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