HGTG20N60A4D Datasheet

IGBT Transistors


This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type HGTG20N60A4D. The diode used in anti-parallel is the development type HGTG20N60A4D. HGTG20N60A4D Features • >100kHz Operation At 390V, 20A• 200kHz Operation At 390V, 12A• 600V Switching SOA Capability• Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125oC• Low Conduction Loss• Temperature Compensating SABER™ Model


[{"Name":"Configuration","Value":"Single"},{"Name":"Collector- Emitter Voltage VCEO Max","Value":"600 V "},{"Name":"Collector-Emitter Saturation Voltage","Value":"1.8 V "},{"Name":"Maximum Gate Emitter Voltage","Value":"+/- 20 V"},{"Name":"Continuous Collector Current at 25 C","Value":"70 A "},{"Name":"Gate-Emitter Leakage Current","Value":"+/- 250 nA "},{"Name":"Power Dissipation","Value":"290 W "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Package / Case","Value":"TO-247-3 "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

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