HomedatasheetHGTG30N60B3D

HGTG30N60B3D Datasheet

Transistors
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Description

60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features
• 60A, 600V, TC= 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Features

Parameters

[{"Name":" Collector- Emitter Voltage VCEO Max:","Value":"600 V"},{"Name":"Collector-Emitter Saturation Voltage:","Value":"1.45 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"+/- 20 V"},{"Name":"Continuous Collector Current at 25 C:","Value":"60 A "},{"Name":"Gate-Emitter Leakage Current:","Value":"+/- 250 nA"},{"Name":" Power Dissipation:","Value":"208 W"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C "},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Continuous Collector Current Ic Max:","Value":"60 A"},{"Name":"","Value":""}]

Manufacturer information

FAIRCHILD SEMICONDUCTOR
Warm Hint

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