HGTG30N60B3D Datasheet



60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

• 60A, 600V, TC= 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode



[{"Name":" Collector- Emitter Voltage VCEO Max:","Value":"600 V"},{"Name":"Collector-Emitter Saturation Voltage:","Value":"1.45 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"+/- 20 V"},{"Name":"Continuous Collector Current at 25 C:","Value":"60 A "},{"Name":"Gate-Emitter Leakage Current:","Value":"+/- 250 nA"},{"Name":" Power Dissipation:","Value":"208 W"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C "},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Continuous Collector Current Ic Max:","Value":"60 A"},{"Name":"","Value":""}]

Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us


One to One Customer Service