HomedatasheetHN1C01FUGRLFT

HN1C01FUGRLFT Datasheet

Transistors
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Description

The general description of HN1C01FUGRLFT is Transistors Bipolar - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA. HN1C01FUGRLFT Features • Small package (Dual type) • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
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Parameters

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Manufacturer information

SILICON LABORATORIES
Warm Hint

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