HomedatasheetHUFA75333S3ST

HUFA75333S3ST Datasheet

66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
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Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
   
Features
• 66A, 55V
• Simulation Models
    - Temperature Compensated PSPICE® and SABER™
        Models
    - SPICE and SABER Thermal Impedance Models
        Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount
        Components to PC Boards”
   

Features

Parameters


Manufacturer information

FAIRCHILD SEMICONDUCTOR

Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today. In an era where diversity can dilute focus and hamper innovation, we specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions for the mobile, industrial, cloud, automotive, lighting, and computing industries. Fairchild is one of the most reliable partners in the industry, offering the shortest time from concept to silicon, expert FAEs for customer support, and a flexible, multi-source supply chain. Our vision is clear – anticipate the power efficiencies demanded by tomorrow’s electronic products and deliver an amazing design experience

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