HomedatasheetHX6356PSHC

HX6356PSHC Datasheet

32K x 8 STATIC RAM-SOI
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Description

[Honeywell]

GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.

FEATURES
RADIATION
• Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75µm Process (Leff = 0.6 µm)
• Total Dose Hardness through 1x106 rad(SiO2)
• Neutron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness through 1x1011 rad(Si)/s
• Dose Rate Survivability through 1x1012 rad(Si)/s
• Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit
• Latchup Free

OTHER
• Listed On SMD# 5962-95845
• Fast Read/Write Cycle Times
  ≤17 ns (Typical)
  ≤25 ns (-55 to 125°C)
• Typical Operating power < 15 mW/MHz
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ±10% Power Supply
• Packaging Options
  - 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
  - 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)

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Manufacturer information

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