IKW25T120 Datasheet

IGBTs - Single


The description of the IKW25T120 is IGBT 1200V 50A 190W TO247-3. IKW25T120 Features • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D• Short circuit withstand time – 10µs• Designed for : - Frequency Converters - Uninterrupted Power Supply• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)• Low EMI• Low Gate Charge• Very soft, fast recovery anti-parallel EmCon HE diode


[{"Name":"Voltage - Collector Emitter Breakdown (Max) ","Value":"1200V"},{"Name":"Vce(on) (Max) @ Vge, Ic","Value":"2.2V @ 15V, 25A"},{"Name":"Current - Collector (Ic) (Max)","Value":"50A"},{"Name":"Current - Collector Pulsed (Icm)","Value":"75A"},{"Name":"Power - Max","Value":"190W"},{"Name":"Switching Energy","Value":"4.2mJ "},{"Name":"Gate Charge","Value":"155nC"},{"Name":"Td (on/off) @ 25°C","Value":"50ns/560ns"},{"Name":"Test Condition","Value":"600V, 25A, 22 Ohm, 15V"},{"Name":"Reverse Recovery Time (trr) ","Value":"200ns"}]

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