HomedatasheetIR21091SPBF

IR21091SPBF Datasheet

PMIC - MOSFET, Bridge Drivers - External Switch
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Description

The IR21091SPBF is high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVICand latch immune CMOS technologies enable ruggeP dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. IR21091SPBF Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V, 5V and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with IN input• Logic and power ground +/- 5V offset.• Internal 500ns dead-time, and programmable up to 5us with one external RDT resistor• Lower di/dt gate driver for better noise immunity• The dual function DT/SD pin input turns off both channels.• Available in Lead-Free
Features

Parameters

[{"Name":"Delay Time","Value":"750ns"},{"Name":"Current - Peak","Value":"200mA"},{"Name":"High Side Voltage - Max (Bootstrap)","Value":"600V"},{"Name":"Voltage - Supply","Value":"10 V ~ 20 V"},{"Name":"Operating Temperature ","Value":"-40°C ~ 125°C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

ONSEMI [ON SEMICONDUCTOR]
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