HomedatasheetIR2110S

IR2110S Datasheet

Power Driver ICs
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Description

The IR2110S are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. IR2110S Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset• CMOS Schmitt-triggered inputs with pull-down• Cycle by cycle edge-triggered shutdown logic• Matched propagation delay for both channels• Outputs in phase with inputs
Features

Parameters

[{"Name":"Product","Value":"H-Bridge Drivers "},{"Name":"Type ","Value":"High and Low Side Driver"},{"Name":"Rise Time","Value":"35 ns"},{"Name":"Fall Time","Value":"25 ns"},{"Name":"Supply Voltage - Max","Value":"20 V"},{"Name":"Supply Voltage - Min ","Value":"10 V"},{"Name":"Supply Current","Value":"0.34 mA"},{"Name":"Maximum Power Dissipation","Value":"1250 mW"},{"Name":"Maximum Operating Temperature","Value":"+ 125 C"},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case","Value":"SOIC-16 "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

HTC [HTC KOREA TAEJIN TECHNOLOGY CO.]
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