HomedatasheetIR2151SPBF

IR2151SPBF Datasheet

Power Driver ICs
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Description

The IR2151SPBF is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts. IR2151SPBF Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Undervoltage lockout• Matched propagation delay for both channels• Low side output in phase with RT
Features

Parameters

[{"Name":"Rise Time:","Value":"120 ns"},{"Name":"Fall Time:","Value":"70 ns"},{"Name":" Output Current:","Value":"0.25 A"},{"Name":"Supply Voltage - Max:","Value":"20 V"},{"Name":"Supply Voltage - Min:","Value":"12 V"},{"Name":"Supply Current:","Value":"5 mA"},{"Name":"Maximum Power Dissipation:","Value":"625 mW"},{"Name":"Maximum Operating Temperature:","Value":"+ 125 C"},{"Name":"Minimum Operating Temperature:","Value":"- 40 C"},{"Name":"","Value":""}]

Manufacturer information

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