IRF1010EZLPBF Datasheet

FETs - Single


Specifically designed for Automotive applications,this IRF1010EZLPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. IRF1010EZLPBF Features • Advanced Process Technology• Ultra Low On-Resistance• Dynamic dv/dt Rating• 175°C Operating Temperature• Fast Switching• Repetitive Avalanche Allowed up to Tjmax


[{"Name":"Drain to Source Voltage (Vdss) ","Value":"60V"},{"Name":"Current - Continuous Drain (Id) @ 25° C ","Value":"75A (Tc) "},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"8.5 mOhm @ 51A, 10V "},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"8.5 mOhm @ 51A, 10V "},{"Name":"Vgs(th) (Max) @ Id ","Value":"4V @ 100μA "},{"Name":"Gate Charge (Qg) @ Vgs ","Value":"86nC @ 10V "},{"Name":"Input Capacitance (Ciss) @ Vds ","Value":"2810pF @ 25V "},{"Name":"Power - Max ","Value":"140W"},{"Name":"","Value":""},{"Name":"","Value":""}]

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