HomedatasheetIRF1404PBF

IRF1404PBF Datasheet

Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 202A)
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Description

Description
Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.

 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Automotive Qualified (Q101)
 Lead-Free

Features

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Manufacturer information

INTERNATIONAL RECTIFIER
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