Home datasheet IRF3205

IRF3205

Power MOSFET
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Description

IRs HEXFET power MOSFET- IRF3205 using advanced manufacturing technology and it has a very low on-resistance. Because of these two features , fast converion rate and rugged HEXFET design, IRF3205 becomes an extremely efficient and reliable, ultra-wide range of applications device. Looking for Rohs IRF3205 please inquiry our suppliers. IRF3205 Characteristics •Advanced technology•Patch installation•Low-end through-hole mounting•Ultra-low-resistance•Dynamic dv / dt rate•175 ° C Operating Temperature•Fast conversion rate•Unleaded environmental
Features

Parameters

[{"Name":"Type of control channel","Value":"N-Channel "},{"Name":"Maximum power dissipation (Pd)","Value":"150W "},{"Name":"Maximum drain-source voltage (Uds)","Value":"55V "},{"Name":"Maximum gate-source voltage (Ugs)","Value":" 10V "},{"Name":"Maximum drain current (Id)","Value":"98A"},{"Name":"Maximum junction temperature (Tj)","Value":"150°C"},{"Name":"Package","Value":"TO-220AB"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

DALLAS SEMICONDUCTOR
Warm Hint

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