HomedatasheetIRF3205S

IRF3205S Datasheet

MOSFET
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Description

The IRF3205S is Advanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET powerMOSFETs are well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highest powercapability and the lowest possible on-resistance in any existing surfacemount package. The D2Pak is suitable for high current applicationsbecause of its low internal connection resistance and can dissipate upto 2.0W in a typical surface mount application.The through-hole version (IRF3205L) is available for low-profile applications. IRF3205S Features • Advanced Process Technology• Ultra Low On-Resistance• Dynamic dv/dt Rating• 175°C Operating Temperature• Fast Switching• Fully Avalanche Rated
Features

Parameters

[{"Name":"Transistor Polarity ","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage ","Value":"55 V "},{"Name":"Gate-Source Breakdown Voltage ","Value":"20 V "},{"Name":"Continuous Drain Current ","Value":"110 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"8 mOhms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 175 C"},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case ","Value":"D2PAK "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

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