HomedatasheetIRF3205ZPBF

IRF3205ZPBF Datasheet

MOSFET
Share:
Manufacturer

Description

The IRF3205ZPBF is Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. IRF3205ZPBF Features • Advanced Process Technology• Ultra Low On-Resistance• 175°C Operating Temperature• Fast Switching• Repetitive Avalanche Allowed up to Tjmax• Lead-Free
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"55 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current","Value":"110 A "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220AB "},{"Name":"Packaging","Value":"Tube "},{"Name":"Gate Charge Qg","Value":"76 nC "},{"Name":"Power Dissipation","Value":"170 W "}]

Manufacturer information

ROHM
Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us

+86-755-83536845

One to One Customer Service

17190417227