IRF5852TR Datasheet



These IRF5852TR is N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. IRF5852TR Features • Ultra Low On-Resistance• Dual N-Channel MOSFET• Surface Mount• Available in Tape & Reel• Low Gate Charge


[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"20 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"12 V "},{"Name":"Continuous Drain Current","Value":"2.7 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"90 mOhms "},{"Name":"Configuration","Value":"Dual "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"TSOP-6 "},{"Name":"Packaging","Value":"Reel "}]

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