HomedatasheetIRF640N

IRF640N Datasheet

Power Mosfet
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Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. IRF640N Features • Advanced Process Technology• Dynamic dv/dt Rating• 175°C Operating Temperature• Fast Switching• Fully Avalanche Rated• Ease of Paralleling• Simple Drive Requirements• Lead-Free
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"200 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Continuous Drain Current","Value":"18 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"150 mOhms"},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Minimum Operating Temperature","Value":"- 55 C "},{"Name":"Gate Charge Qg","Value":"44.7 nC "},{"Name":"Typical Turn-Off Delay Time","Value":"23 ns"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

RECTRON SEMICONDUCTOR
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