HomedatasheetIRF6631PBF

IRF6631PBF Datasheet

Transistors
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Description

The IRF6631PBF combines the latest HEXFET&reg; Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The Direct FET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631PBF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance tore duce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that are critical in synchronous buck converter&rsquo;s Ctrl FET sockets. IRF6631PBF Features &bull; RoHs Compliant&bull; Lead-Free (Qualified up to 260&deg;C Reflow)&bull; Ideal for CPU Core DC-DC Converters&bull; Low Switching and Conduction Losses&bull; Low Profile (<0.7mm)&bull; Dual Sided Cooling Compatible&bull; Compatible with existing Surface Mount Techniques
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"30 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V"},{"Name":"Continuous Drain Current","Value":"13 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"10.8 mOhms"},{"Name":"Gate Charge Qg","Value":"12 nC"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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