HomedatasheetIRF7304TRPBF

IRF7304TRPBF Datasheet

MOSFET
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Description

The IRF7304TRPBF is Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. IRF7304TRPBF Features • Generation V Technology• Ultra Low On-Resistance• Dual P-Channel Mosfet• Surface Mount• Available in Tape & Reel• Dynamic dv/dt Rating• Fast Switching
Features

Parameters

[{"Name":"Transistor Polarity","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"- 20 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"12 V "},{"Name":"Continuous Drain Current","Value":"- 4.3 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"140 mOhms"},{"Name":"Configuration","Value":"Dual "},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case","Value":"SOIC-8"},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

DIODES
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