IRF7402TRPBF Datasheet



The IRF7402TRPBF is Fifth Generation HEXFET&reg; power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF7402TRPBF Features &bull; Generation V Technology&bull; Ultra Low On-Resistance&bull; N-Channel MOSFET&bull; Very Small SOIC Package&bull; Low Profile (<1.1mm)&bull; Available in Tape & Reel&bull; Fast Switching


[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"20 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"12 V "},{"Name":"Continuous Drain Current","Value":"6.8 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"35 mOhms "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOIC-8 "},{"Name":"Packaging","Value":"Reel "},{"Name":"Gate Charge Qg","Value":"14 nC "},{"Name":"Power Dissipation","Value":"2.5 W"}]

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