HomedatasheetIRF7413T

IRF7413T Datasheet

FETs - Single
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Description

The IRF7413T is a Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremly low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF7413T Features • Generation V Technology• UItra Low On-Resistance• N-Channel Mosfet• Surface Mount• Available in Tape&Reel• Fast Switching• 100% Rg Tested• Lead-Free
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current","Value":"13 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"18 mOhms "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOIC-8 "},{"Name":"Packaging","Value":"Reel "},{"Name":"Gate Charge Qg","Value":"44 nC "},{"Name":"Power Dissipation","Value":"2.5 W"}]

Manufacturer information

MCC
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