HomedatasheetIRF7832PBF

IRF7832PBF Datasheet

FETs - Single
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Description

The description of the IRF7832PBF is MOSFET N-CH 30V 20A 8-SOIC. IRF7832PBF Features • Very Low RDS(on) at 4.5V VGS• Ultra-Low Gate Impedance• Fully Characterized Avalanche Voltage and Current• 20V VGS Max. Gate Rating• 100% tested for Rg IRF7832PBF Applications • Synchronous MOSFET for Notebook Processor Power• Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems• Lead-Free
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss) ","Value":"30V"},{"Name":"Current - Continuous Drain (Id) @ 25° C ","Value":"20A (Ta) "},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"4 mOhm @ 20A, 10V "},{"Name":"Vgs(th) (Max) @ Id ","Value":"2.32V @ 250μA "},{"Name":"Gate Charge (Qg) @ Vgs ","Value":"51nC @ 4.5V "},{"Name":"Input Capacitance (Ciss) @ Vds ","Value":"4310pF @ 15V "},{"Name":"Power - Max ","Value":"2.5W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SILICON LABORATORIES
Warm Hint

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