HomedatasheetIRFIBC40G

IRFIBC40G Datasheet

Power MOSFET
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Description

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.

FEATURES
• Isolated Package
• Low Thermal Resistance
• Sink to Lead Creepage Dist. = 4.8 mm
• High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz)
• Dynamic dV/dt Rating
• Lead (Pb)-free Available

Features

Parameters

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Manufacturer information

VISHAY SEMICONDUCTORS
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