IRFP360LC Datasheet



This IRFP360LC is new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements,faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. IRFP360LC Features • Ultra Low Gate Charge• Reduced Gate Drive Requirement• Enhanced 30V Vgs Rating• Reduced Ciss, Coss, Crss• Isolated Central Mounting Hole• Dynamic dv/dt Rated• Repetitive Avalanche Rated


[{"Name":"Transistor Polarity ","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage","Value":"400 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current","Value":"23 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.2 Ohms "},{"Name":"Configuration ","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case ","Value":"TO-247AC"},{"Name":"Packaging","Value":"Tube "}]

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