HomedatasheetIRFP4110PBF

IRFP4110PBF Datasheet

HEXFET® Power MOSFET
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Description

VDSS 100V
RDS(on) typ. 3.7mΩ
max. 4.5mΩ
ID (Silicon Limited) 180A
ID (Package Limited) 120A

Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability

Aplications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

 

Features

Parameters

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Manufacturer information

INTERNATIONAL RECTIFIER
Warm Hint

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