This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends