Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Ease of paralleling