HomedatasheetIRFP4768PBF

IRFP4768PBF Datasheet

Transistors
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Description

The description of the IRFP4768PBF is MOSFET MOSFT 250V 83A 21mOhm 195nC Qg. IRFP4768PBF Features • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche SOA• Enhanced body diode dV/dt and dI/dt Capability• Lead-Free IRFP4768PBF Applications • High Efficiency Synchronous Rectification in SMPS• Uninterruptible Power Supply• High Speed Power Switching• Hard Switched and High Frequency Circuits
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage: ","Value":"250 V "},{"Name":"Gate-Source Breakdown Voltage: ","Value":"+/- 20 V "},{"Name":"Continuous Drain Current: ","Value":"93 A "},{"Name":"Resistance Drain-Source RDS (on): ","Value":"17.5 mOhms "},{"Name":"Maximum Operating Temperature: ","Value":"+ 175 C "},{"Name":"Fall Time: ","Value":"110 ns "},{"Name":"Forward Transconductance gFS (Max / Min): ","Value":"100 S "},{"Name":"Gate Charge Qg: ","Value":"180 nC "},{"Name":"Minimum Operating Temperature: ","Value":"- 55 C "},{"Name":"Minimum Operating Temperature: ","Value":"- 55 C "}]

Manufacturer information

DIODES
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