IRFPS3810PBF Datasheet



The IRFPS3810PBF Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRFPS3810PBF Features •Advanced Process Technology•Ultra Low On-Resistance•Dynamic dv/dt Rating•175°C Operating Temperature•Fast Switching• Fully Avalanche Rated•Lead-Free


[{"Name":"Drain-Source Breakdown Voltage:","Value":"100 V"},{"Name":" Gate-Source Breakdown Voltage:","Value":"30 V"},{"Name":" Continuous Drain Current:","Value":"141 A"},{"Name":" Maximum Operating Temperature:","Value":"+ 175 C"},{"Name":"Fall Time:","Value":"140 ns"},{"Name":" Gate Charge Qg:","Value":"260 nC"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":" Power Dissipation:","Value":"441 W"},{"Name":"Rise Time:","Value":"25"},{"Name":"","Value":""}]

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