HomedatasheetIRFPS3810PBF

IRFPS3810PBF Datasheet

Transistors
Share:
Manufacturer

Description

The IRFPS3810PBF Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRFPS3810PBF Features •Advanced Process Technology•Ultra Low On-Resistance•Dynamic dv/dt Rating•175°C Operating Temperature•Fast Switching• Fully Avalanche Rated•Lead-Free
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"100 V"},{"Name":" Gate-Source Breakdown Voltage:","Value":"30 V"},{"Name":" Continuous Drain Current:","Value":"141 A"},{"Name":" Maximum Operating Temperature:","Value":"+ 175 C"},{"Name":"Fall Time:","Value":"140 ns"},{"Name":" Gate Charge Qg:","Value":"260 nC"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":" Power Dissipation:","Value":"441 W"},{"Name":"Rise Time:","Value":"25"},{"Name":"","Value":""}]

Manufacturer information

FIDI
Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us

+86-755-83536845

One to One Customer Service

17190417227