HomedatasheetIRFR540Z

IRFR540Z Datasheet

HEXFET® Power MOSFET
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Description

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

Features

Parameters

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Manufacturer information

INTERNATIONAL RECTIFIER
Warm Hint

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