Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax