IRFR9120N Datasheet



The IRFR9120N is a Fifth Generation HEXFETs from Internationl Rectifier utilize advanced processing techniques to achieve extremely Low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRFR9120N Features • Uitra Low On-Resistance• P-Channel• Surface Mount(IRFR9120N)• Straight lead(IRFR9120N)• Advanced Process Technology• Fast Switching• Fully Avalanche Rated• Lead-Free


[{"Name":"Transistor Polarity ","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage ","Value":"- 100 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current","Value":"- 6.5 A"},{"Name":"Resistance Drain-Source RDS (on) ","Value":"480 mOhms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style ","Value":"SMD/SMT "},{"Name":"Package / Case ","Value":"DPAK "},{"Name":"Packaging","Value":"Reel "}]

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