HomedatasheetIRFZ44N

IRFZ44N Datasheet

N-channel enhancement mode TrenchMOS transistor
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Description

GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.

 

Features

Parameters


Manufacturer information

PHILIPS ELECTRONICS

Philips Semiconductors was acquired by NXP Semiconductors.

NXP Semiconductors, formerly Philips Semiconductors, has fifty years of innovation and a rich IP portfolio that firmly establishes NXP as Europe's second largest semiconductor company.



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