HomedatasheetIRFZ44Z

IRFZ44Z Datasheet

Transistors
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Description

This HEXFET® Power MOSFET( IRFZ44Z ) utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRFZ44Z Features • Advanced Process Technology• Ultra Low On-Resistance• Dynamic dv/dt Rating• 175°C Operating Temperature• Repetitive Avalanche Allowed up to Tjmax• Lead-Free
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"55 V"},{"Name":" Continuous Drain Current:","Value":"51 A"},{"Name":" Drain-Source On Resistance:","Value":"13.9 mOhms"},{"Name":"Maximum Operating Temperature:","Value":"+ 175 C"},{"Name":" Power Dissipation:","Value":"80 W"},{"Name":"Rise Time:","Value":"68 ns"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SEIKO INSTRUMENTS

Seiko Instruments Inc. Is a Japanese company which head office is located in 8, Nakase 1-chome, Mihama-ku, Chiba-shi, Chiba 261-8507, Japan . It’s business lines are: Watches Business Watches, Watch Movements Electronic Components Business Quartz crystals, Micro batteries, etc. Precision Mechatronics Business Inkjet printer heads, Hard disk components, Thermal printers, Compact precision components, Machine tools, FA, Musical instrument accessories, Radiation detection and measurement systems, etc.


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