HomedatasheetIRFZ48N

IRFZ48N Datasheet

N-Channel MOSFET Transistor
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Description

IRFZ48N is N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. IRFZ48N is intended for use in switched mode resistance power supplies and general purpose switching applications. IRFZ48N Features ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated
Features

Parameters

[{"Name":"MAXIMUM Drain-Source Voltage VDSS","Value":"55 V"},{"Name":"Maximum Gate-Source Voltage-Continuous VGS","Value":"±20 V"},{"Name":"Maximum Drain Current-Continuous ID","Value":"64 A"},{"Name":"Maximum Drain Current-Single Pluse IDM","Value":"210 A"},{"Name":"Maximum Total Dissipation @TC=25℃ PD","Value":"130 W"},{"Name":"Max. Operating Junction Temperature TJ","Value":"175 °C"},{"Name":"Storage Temperature Tstg","Value":"–55 to +175 °C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

FUJI ELECTRIC
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