HomedatasheetIRGB10B60KDPBF

IRGB10B60KDPBF Datasheet

Transistors
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Description

The general description of IRGB10B60KDPBF is IGBT Transistors 600V UltraFast 10-30kHz. IRGB10B60KDPBF Features • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10μs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Lead-Free IRGB10B60KDPBF Applications • Benchmark Efficiency for Motor Control.• Rugged Transient Performance.• Low EMI.• Excellent Current Sharing in Parallel Operation.
Features

Parameters

[{"Name":"Collector- Emitter Voltage VCEO Max","Value":"600 V"},{"Name":"Collector-Emitter Saturation Voltage","Value":"2.2 V"},{"Name":"Maximum Gate Emitter Voltage","Value":"+/- 20 V"},{"Name":"Continuous Collector Current at 25 C","Value":"22 A"},{"Name":"Power Dissipation","Value":"104 W"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SEIKO INSTRUMENTS
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