HomedatasheetIRGP4063PBF

IRGP4063PBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR
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Description

Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM 
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
• Lead Free Package

 

Features

Parameters


Manufacturer information

INTERNATIONAL RECTIFIER
Warm Hint

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