HomedatasheetIRL3103L

IRL3103L Datasheet

MOSFET
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Description

The IRL3103L is Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRL3103L Features • Advanced Process Technology• Surface Mount (IRL3103S)• Low-profile through-hole (IRL3103L)• 175°C Operating Temperature• Fast Switching• Fully Avalanche Rated• Lead-Free
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"16 V "},{"Name":"Continuous Drain Current","Value":"64 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"16 mOhms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-262 "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]
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