HomedatasheetIRLML6402TRPBF

IRLML6402TRPBF Datasheet

Transistors
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Description

These P-Channel MOSFETs( IRLML6402TRPBF ) from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET&reg; power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industrys smallest footprint. This package, dubbed the Micro3&trade;, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. IRLML6402TRPBF Features &bull; Ultra Low On-Resistance&bull; P-Channel MOSFET&bull; SOT-23 Footprint&bull; Low Profile (<1.1mm)&bull; Available in Tape and Reel&bull; Fast Switching&bull; Lead-Free&bull; Halogen-Free
Features

Parameters

[{"Name":" Drain-Source Breakdown Voltage:","Value":"- 20 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"12 V"},{"Name":"Continuous Drain Current:","Value":"- 3.7 A"},{"Name":" Drain-Source On Resistance:","Value":"65 mOhms"},{"Name":"Gate Charge Qg:","Value":"8 nC "},{"Name":" Power Dissipation:","Value":"1.3 W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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